KSC2335 0

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Язык: Английский
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Resonant gate drive techniques for power MOSFETs Chen Y.
With the use of the simplistic equivalent circuits, loss mechanism in conventional power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) gate drive circuits is analyzed Resonant gate drive techniques are investigated and a new resonant gate drive circuit is presented
KSC2335F 0
Ballistic gate MOSFET 0
For a number of years, the frequency of switchmode power supplies increased, but lately that has stalled One reason is that switching losses are greater with higher with frequency, and recent trends have rightly emphasized reducing losses for increased efficiency and for better thermal management
KSC5027 0

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